A parallel block iterative method for the hydrodynamic device model

Author

Gardner, Carl L. ; Lanzkron, Paul J. ; Rose, Donald J.

Author_Institution

Dept. of Comput. Sci., Duke Univ., Durham, NC, USA

Volume

10

Issue

9

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

1187

Lastpage

1192

Abstract

Block iterative methods are applied to hydrodynamic simulations of a one-dimensional submicrometer semiconductor device. It is shown that block successive underrelaxation (SUR) converges with a fixed relaxation factor ω=0.13 for simulations at 300 K and ω=0.04 at 77 K. To demonstrate the robustness of the block iterative method, numerical simulations of a steady-state electron shock wave in Si at 300 K for a 0.1-μm channel and at 77 K for a 1.0-μm channel are presented. The block SUR method is parallelizable if each diagonal block solve can be done efficiently in parallel. Using chaotic relaxation and the preconditioned conjugate gradient method for the parallel diagonal block solves, a parallel speed up of approximately 2.5 is obtained on 10 processors of a Butterfly GP-1000

Keywords

iterative methods; parallel processing; relaxation theory; semiconductor device models; 0.1 to 1 micron; 1D submicron device; Butterfly GP-1000; Si; block successive underrelaxation; chaotic relaxation; hydrodynamic device model; hydrodynamic simulations; one-dimensional submicrometer semiconductor device; parallel block iterative method; preconditioned conjugate gradient method; steady-state electron shock wave; Chaos; Electrons; Gradient methods; Hydrodynamics; Iterative methods; Numerical simulation; Robustness; Semiconductor devices; Shock waves; Steady-state;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.85765

Filename

85765