• DocumentCode
    1368192
  • Title

    Riding the crest of a new wave in memory [NOVORAM]

  • Author

    Likharev, Konstantin K.

  • Author_Institution
    Dept. of Phys., State Univ. of New York, Stony Brook, NY, USA
  • Volume
    16
  • Issue
    4
  • fYear
    2000
  • fDate
    7/1/2000 12:00:00 AM
  • Firstpage
    16
  • Lastpage
    21
  • Abstract
    NOVORAM is a convenient new paradigm that may enable the Moore-law-type progress of semiconductor memory technology to be extended well into the nanoscale, terabit range. However, it still faces the challenges of CMOS-compatible deposition of high-quality, few-nanometer layers of wide-bandgap semiconductors
  • Keywords
    CMOS memory circuits; nanotechnology; random-access storage; wide band gap semiconductors; CMOS-compatible deposition; NOVORAM; nanoscale devices; terabit range; wide-bandgap semiconductors; CMOS technology; Semiconductor memory;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.857746
  • Filename
    857746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1368192