Title :
Riding the crest of a new wave in memory [NOVORAM]
Author :
Likharev, Konstantin K.
Author_Institution :
Dept. of Phys., State Univ. of New York, Stony Brook, NY, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
NOVORAM is a convenient new paradigm that may enable the Moore-law-type progress of semiconductor memory technology to be extended well into the nanoscale, terabit range. However, it still faces the challenges of CMOS-compatible deposition of high-quality, few-nanometer layers of wide-bandgap semiconductors
Keywords :
CMOS memory circuits; nanotechnology; random-access storage; wide band gap semiconductors; CMOS-compatible deposition; NOVORAM; nanoscale devices; terabit range; wide-bandgap semiconductors; CMOS technology; Semiconductor memory;
Journal_Title :
Circuits and Devices Magazine, IEEE
