Title :
On the go with SONOS
Author :
White, Marvin H. ; Adams, Dennis A. ; Bu, Jiankang
Author_Institution :
Dept. of Electr. Eng., Lehigh Univ., Bethlehem, PA, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
Advancements in scaling gate insulators for MOS transistors permit low-voltage, silicon-oxide-nitride-silicon (SONOS) nonvolatile semiconductor memories (NVSMs) for a wide range of applications. The continued scaling of SONOS devices offers improved performance with a small cell size, single-level polysilicon with low voltage, fast erase/write, improved memory retention, increased endurance, and radiation hardness. In this article, we discuss scaled SONOS devices, SONOS memory technology, and some SONOS NVSM applications
Keywords :
integrated circuit reliability; integrated memory circuits; radiation hardening (electronics); semiconductor-insulator-semiconductor devices; SIS structures; SONOS; SONOS nonvolatile semiconductor memories; Si-SiO2-Si3N4-Si; cell size; endurance; gate insulators; memory retention; memory technology; radiation hardness; single-level polysilicon; Charge pumps; Circuits; Conductive films; Dielectric thin films; Electrodes; Nonvolatile memory; SONOS devices; Semiconductor device reliability; Temperature; Voltage;
Journal_Title :
Circuits and Devices Magazine, IEEE
