Reliable extraction of MOS interface traps from low-frequency CV measurements

Author

Pacelli, A. ; Lacaita, A.L. ; Villa, S. ; Perron, L.

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

19

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

148

Lastpage

150

Abstract

An improved version of the low-frequency capacitance-voltage (LFCV) method for MOS interface trap extraction is presented. The rising edge of the gate-channel capacitance is used as a reliable reference for determining the surface potential, allowing a more accurate calculation of the trap energy. Also, a self-consistent Schrodinger-Poisson solver is employed to obtain a theoretical CV curve, accounting for quantization effects. It is shown that the improved method supplies better results than the conventional LFCV and high-low frequency methods.

Keywords

MOSFET; Schrodinger equation; capacitance; characteristics measurement; electron traps; elemental semiconductors; interface states; silicon; silicon compounds; surface potential; MOS interface traps; MOSFETs; Si-SiO/sub 2/; gate-channel capacitance; low-frequency CV measurements; quantization effects; self-consistent Schrodinger-Poisson solver; surface potential; trap energy; trap extraction; Capacitance measurement; Energy measurement; Frequency; Interface states; Low-frequency noise; Parasitic capacitance; Photonic band gap; Potential energy; Quantization; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.669731

Filename

669731