Title :
New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs
Author :
Georgescu, Bogdan ; Py, Marcel A. ; Souifi, Abdelkader ; Post, Georg ; Guillot, Gérard
Author_Institution :
Lab. Phys. de la Matiere, CNRS, Villeurbanne, France
fDate :
5/1/1998 12:00:00 AM
Abstract :
The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFETs) was investigated as a function of temperature and optical excitation. Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process is still present. The kink at low temperatures is suppressed by illumination with photons of energy above 1 eV. These results prove that this parasitic effect is mainly related to the presence of traps in the top layers.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; field effect transistors; gallium arsenide; impact ionisation; indium compounds; integrated optoelectronics; leakage currents; phototransistors; 1 eV; 325 K; III-V semiconductors; InAlAs-InGaAs-InP; composite channel heterojunction field effect transistors; drain source; gate current measurements; impact ionization process; inverted HFET; kink effect; optical excitation; parasitic effect; traps; Current measurement; FETs; HEMTs; Heterojunctions; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Temperature;
Journal_Title :
Electron Device Letters, IEEE
