New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

Author

Georgescu, Bogdan ; Py, Marcel A. ; Souifi, Abdelkader ; Post, Georg ; Guillot, Gérard

Author_Institution

Lab. Phys. de la Matiere, CNRS, Villeurbanne, France

Volume

19

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

154

Lastpage

156

Abstract

The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFETs) was investigated as a function of temperature and optical excitation. Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process is still present. The kink at low temperatures is suppressed by illumination with photons of energy above 1 eV. These results prove that this parasitic effect is mainly related to the presence of traps in the top layers.

Keywords

III-V semiconductors; aluminium compounds; electron traps; field effect transistors; gallium arsenide; impact ionisation; indium compounds; integrated optoelectronics; leakage currents; phototransistors; 1 eV; 325 K; III-V semiconductors; InAlAs-InGaAs-InP; composite channel heterojunction field effect transistors; drain source; gate current measurements; impact ionization process; inverted HFET; kink effect; optical excitation; parasitic effect; traps; Current measurement; FETs; HEMTs; Heterojunctions; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.669733

Filename

669733