DocumentCode
1368324
Title
A feedforward bidirectional associative memory
Author
Wu, Yingquan ; Pados, Dimitris A.
Author_Institution
Dept. of Electr. Eng., State Univ. of New York, Buffalo, NY, USA
Volume
11
Issue
4
fYear
2000
fDate
7/1/2000 12:00:00 AM
Firstpage
859
Lastpage
866
Abstract
In contrast to conventional feedback bidirectional associative memory (BAM) network models, a feedforward BAM network is developed based on a one-shot design algorithm of O(p2(n+m)) computational complexity, where p is the number of prototype pairs and n, m are the dimensions of the input/output bipolar vectors. The feedforward BAM is an n-p-m three-layer network of McCulloch-Pitts neurons with storage capacity 2min{m,n} and guaranteed perfect bidirectional recall. The overall network design procedure is fully scalable in the sense that any number p⩽2min{m,n} of bidirectional associations can be implemented. The prototype patterns may be arbitrarily correlated. With respect to inference performance, it is shown that the Hamming attractive radius of each prototype reaches the maximum possible value. Simulation studies and comparisons illustrate and support these theoretical developments
Keywords
computational complexity; content-addressable storage; correlation theory; feedforward; inference mechanisms; optimisation; Hamming attractive radius; I/O bipolar vectors; McCulloch-Pitts neurons; computational complexity; feedforward BAM network; feedforward bidirectional associative memory; guaranteed perfect bidirectional recall; input/output bipolar vectors; neural net; storage capacity; three-layer network; Algorithm design and analysis; Artificial neural networks; Associative memory; Computational complexity; Feedforward neural networks; Hopfield neural networks; Magnesium compounds; Neural networks; Neurons; Prototypes;
fLanguage
English
Journal_Title
Neural Networks, IEEE Transactions on
Publisher
ieee
ISSN
1045-9227
Type
jour
DOI
10.1109/72.857767
Filename
857767
Link To Document