Title :
Improvement of electron emission efficiency and stability by surface application of molybdenum silicide onto gated poly-Si field emitters
Author :
Hyung Soo Uh ; Byung Gook Park ; Jong Duk Lee
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
5/1/1998 12:00:00 AM
Abstract :
As an approach to improve electron field emission and its stability, molybdenum (Mo) silicide formation on n/sup +/ polycrystalline silicon (poly-Si) emitters has been investigated. Mo silicide was produced by direct metallurgical reaction, namely, deposition of Mo and subsequent rapid thermal annealing. The surface morphologies and emission properties of Mo-silicided poly-Si (Mo-polycide) emitters have been examined and compared with those of poly-Si emitters. While anode current of 0.1 μA per tip could be obtained at the gate voltage of 82 V from poly-Si emitters, the same current level was measured at 72 V from Mo-polycide emitters. In addition, the application of Mo silicide onto poly-Si emitters reduced the emission current fluctuation considerably. These results show that the polycide emitters can have potential applications in vacuum microelectronics to obtain superior electron emission efficiency and stability.
Keywords :
current fluctuations; electron field emission; rapid thermal annealing; semiconductor device metallisation; silicon; vacuum microelectronics; 0.1 muA; 72 V; 82 V; MoSi-Si; Si; anode current; composite layered structure; direct metallurgical reaction; electron emission efficiency; electron emission stability; electron field emission; emission current fluctuation; gated polysilicon field emitters; gated vacuum field emitter arrays; metal deposition; molybdenum silicide; polycide emitters; rapid thermal annealing; surface application; surface morphologies; vacuum microelectronics; Anodes; Current measurement; Electron emission; Fluctuations; Rapid thermal annealing; Silicides; Silicon; Stability; Surface morphology; Voltage;
Journal_Title :
Electron Device Letters, IEEE
