Title :
Monitoring of TiSi2 formation on narrow polycrystalline silicon lines using Raman spectroscopy
Author :
Lim, E.H. ; Karunasiri, G. ; Chua, S.J. ; Wong, H. ; Pey, K.L. ; Lee, K.H.
Author_Institution :
Center for Optoelectron., Nat. Univ. of Singapore, Singapore
fDate :
5/1/1998 12:00:00 AM
Abstract :
Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi2) formation on narrow undoped polycrystalline silicon lines. Linewidths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780/spl deg/C and 1020/spl deg/C were analyzed. Phase changes between C49 and C54-TiSi2 phases were clearly observed. Results demonstrate that analysis of the C54-TiSi2 Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi2 formation. Comparison with sheet resistivity measurements showed that micro-Raman scattering provides a complimentary means to electrical analysis for the study of TiSi2 formation.
Keywords :
Raman spectra; integrated circuit metallisation; polymorphic transformations; rapid thermal annealing; silicon; titanium compounds; 1 to 0.35 micron; 780 to 1020 C; C49-TiSi/sub 2/ phases; C54-TiSi/sub 2/ phases; Raman peak intensity; SALICIDE technology; Si; TiSi/sub 2/; agglomeration; low resistivity silicide formation; micro-Raman spectroscopy; narrow undoped polycrystalline silicon lines; nondestructive estimation; phase changes; polymorphic transformation; process window; silicidation by RTA; silicide formation monitoring; Conductivity; Monitoring; Rapid thermal annealing; Rapid thermal processing; Silicidation; Silicides; Silicon; Spectroscopy; Temperature distribution; Titanium;
Journal_Title :
Electron Device Letters, IEEE
