GaAs-based 1.53 μm GaInNAsSb vertical cavity surface emitting lasers

Author

Sarmiento, Tomas ; Bae, H.P. ; O´Sullivan, T.D. ; Harris, James S.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., Stanford, CA, USA

Volume

45

Issue

19

fYear

2009

Firstpage

978

Lastpage

979

Abstract

Electrically-pumped GaAs-based 1.53 mum vertical cavity surface emitting lasers operating in pulsed mode at room temperature and continuous wave (CW) up to 20degC are reported for the first time. The lasers employ a GaInNAsSb/GaNAs multiple quantum well active region, a selectively oxidised AlAs aperture and p- and n-doped Al(Ga)As/GaAs distributed Bragg reflectors. Typical devices have room-temperature pulsed threshold current densities of 8.3 kA/cm and threshold voltages of 5.5 V. CW threshold currents as low as 2.87 mA for a 7 mum aperture device were observed at 15degC.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser mirrors; optical pumping; quantum well lasers; semiconductor quantum wells; surface emitting lasers; wide band gap semiconductors; GaInNAsSb-GaNAs-AlAs-AlGaAs-GaAs; continuous wave operation; electrically-pumped GaAs-based vertical cavity surface emitting laser; multiple quantum well active region; n-doped distributed Bragg reflectors; oxidised AlAs aperture; p-doped distributed Bragg reflectors; pulsed mode operation; size 7 mum; temperature 15 degC; temperature 293 K to 298 K; threshold current density; threshold voltage; voltage 5.5 V; wavelength 1.53 mum;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2009.1626

Filename

5238490