Title :
The quest for ballistic action: Avoiding collisions during electron transport to increase switching speeds is the goal of the ultimate transistor
Abstract :
After describing how ballistic electrons can be created, the author outlines a working gallium arsenide ballistic transistor. The work that has been done in creating a silicon ballistic transistor is then surveyed.
Keywords :
III-V semiconductors; elemental semiconductors; field effect transistors; gallium arsenide; semiconductor technology; silicon; GaAs ballistic transistor; Si ballistic transistor; ballistic electron transistor; semiconductors; Bipolar transistors; Crystals; Gallium arsenide; Lattices; Metals; Silicon; Transistors;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1986.6370997
