DocumentCode :
1368637
Title :
4×4 GaAs/AlGaAs optical matrix switches with uniform device characteristics using alternating Δβ electrooptic guided-wave directional couplers
Author :
Komatsu, Keiro ; Hamamoto, Kiichi ; Sugimoto, Mitsunori ; Ajisawa, Akira ; Kohga, Yuji ; Suzuki, Akira
Author_Institution :
NEC Corp., Kanagawa, Japan
Volume :
9
Issue :
7
fYear :
1991
fDate :
7/1/1991 12:00:00 AM
Firstpage :
871
Lastpage :
878
Abstract :
Integrated 4×4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers have been realized. In order to achieve uniform device characteristics, molecular beam epitaxy and reactive ion beam etching were chosen as the crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation and little path dependence in ±0.5-dB propagation loss, have been realized
Keywords :
III-V semiconductors; aluminium compounds; directional couplers; electro-optical devices; gallium arsenide; molecular beam epitaxial growth; optical couplers; optical switches; sputter etching; GaAs-AlGaAs optical matrix switches; III-V semiconductors; alternating electrooptic guided wave directional couplers; crystal growth technique; matrix switch architecture; molecular beam epitaxy; path dependence; propagation loss; reactive ion beam etching; simplified tree structure; small switching voltage deviation; uniform device characteristics; waveguide fabrication technique; Directional couplers; Gallium arsenide; Integrated optics; Ion beams; Molecular beam epitaxial growth; Optical devices; Optical switches; Optical waveguides; Particle beam optics; Transmission line matrix methods;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.85788
Filename :
85788
Link To Document :
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