Title :
Progress toward a metal-base transistor
Author :
Poate, J.M. ; Dynes, Robert C.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Interest has been revived in the silicon metal-base transistor because of significant progress in growing thin, single-crystal metal films on silicon. The unique properties of silicides are described and the possibility of attaining ballistic transport in silicides is discussed. The use of the metal-base transistor as a physical probe is considered.
Keywords :
bipolar transistors; elemental semiconductors; silicon; Si metal base transistor; ballistic electron transport; physical probe; semiconductors; silicides; single-crystal metal films; Cobalt; Crystals; Films; Silicides; Silicon; Transistors;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1986.6370998
