Title :
Reduction of spectral noise density in p-i-n-HEMT lightwave receivers
Author :
Schneider, Martin V.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
The spectral noise density of a lightwave receiver is computed from known physical parameters of the photodiode and the high-electron-mobility transistor (HEMT). Low noise is achieved for an appropriate choice of device parameters. The results are applied to circuits built with readily available commercial HEMTs and p-i-n photodiodes. They also predict the superior noise performance of cooled receivers which cannot be readily derived from previous work
Keywords :
electron device noise; high electron mobility transistors; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; receivers; cooled receivers; high-electron-mobility transistor; noise performance; p-i-n-HEMT lightwave receivers; photodiode; spectral noise density; Capacitance; Circuit noise; Electrons; Equivalent circuits; HEMTs; MODFETs; Noise reduction; Photodiodes; Physics computing; Temperature;
Journal_Title :
Lightwave Technology, Journal of
