• DocumentCode
    1368659
  • Title

    A gallium arsenide ballistic transistor?

  • Author

    Nathan, M.I. ; Heiblum, M.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    23
  • Issue
    2
  • fYear
    1986
  • Firstpage
    45
  • Lastpage
    47
  • Abstract
    The authors review the work done in 1985 at the IBM Thomas J. Watson Research Center on measuring the ballistic transport of electrons in a gallium arsenide heterostructure hot-electron transistor. The device is referred to as the tunneling hot-electron transfer amplifier (Theta). The way in which the transistor functions as its own spectrometer is explained. The experimental results obtained with Theta are summarized. It was found that when no voltage is applied across the base-collector heterojunction, essentially only ballistic electrons are collected. These account for about 40% of the total number of electrons injected from the emitter at low temperatures. As the voltage across the collector is increased positively, up to 75% of them are collected.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; hot carriers; p-n heterojunctions; semiconductor device models; GaAs ballistic transistor; Theta; base-collector heterojunction; heterostructure hot-electron transistor; models; semiconductors; tunneling hot-electron transfer amplifier; Aluminum; Educational institutions; Gallium; Gallium arsenide; Semiconductor device measurement; Transistors; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1986.6371000
  • Filename
    6371000