• DocumentCode
    1368674
  • Title

    A novel in situ monitoring technique for reactive ion etching using a surface micromachined sensor

  • Author

    Baker, Michael D. ; Williams, Frances R. ; May, Gary S.

  • Author_Institution
    Hewlett-Packard Co., Corvallis, OR, USA
  • Volume
    11
  • Issue
    2
  • fYear
    1998
  • fDate
    5/1/1998 12:00:00 AM
  • Firstpage
    254
  • Lastpage
    265
  • Abstract
    This paper presents a novel technique for monitoring film thickness in reactive ion etching by incorporating a micromachined sensor. The prototype sensor correlates film thickness with the change in resonant frequency that occurs in a micromachined platform during etching. The platform is suspended over a drive electrode on the surface of the substrate and electrically excited into resonance. As material is etched from the platform, its resonant vibrational frequency shifts by an amount proportional to the amount of material etched, allowing etch rate to be inferred. As a proof-of-concept experiment, a platform made of DuPont 2611 polyimide has been fabricated. The sensor is driven into resonance electrostatically, and the shift in resonance is detected by monitoring the change in impedance between the drive electrode and platform as the drive frequency is swept. To enhance filtering of the sensor signal in the noisy plasma environment, the platform is designed so that the ratio of the plasma frequency to the fundamental mode of vibration is approximately 400:1. The prototype was etched in a Plasma Therm 700 series reactive ion etching (RIE) system in a CHF3/O2 plasma. Electrical contact was made with the sensor using a feedthrough attached to the vacuum line beneath the process chamber to facilitate in situ excitation and measurement. The sensor is shown to offer high resolution (approximately 1300 Hz/um), potentially permitting accurate in situ monitoring of etch rate and uniformity at a nominal cost
  • Keywords
    integrated circuit measurement; micromachining; microsensors; monitoring; sputter etching; thickness measurement; drive electrode; drive frequency; etch rate; etch uniformity; feedthrough; film thickness; in situ monitoring technique; noisy plasma environment; process chamber; reactive ion etching; resonant frequency; surface micromachined sensor; Electrodes; Etching; Monitoring; Plasma applications; Plasma measurements; Prototypes; Resonance; Resonant frequency; Substrates; Thick film sensors;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.670174
  • Filename
    670174