DocumentCode :
1368759
Title :
Design and fabrication of silicon condenser microphone using corrugated diaphragm technique
Author :
Zou, Quanbo ; Li, Zhijian ; Liu, Litian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume :
5
Issue :
3
fYear :
1996
fDate :
9/1/1996 12:00:00 AM
Firstpage :
197
Lastpage :
204
Abstract :
A novel silicon condenser microphone with a corrugated diaphragm has been proposed, designed, fabricated and tested. The microphone is fabricated on a single wafer by use of silicon anisotropic etching and sacrificial layer etching techniques, so that no bonding techniques are required. The introduction of corrugations has greatly increased the mechanical sensitivities of the microphone diaphragms due to the reduction of the initial stress in the thin films, For the purpose of further decreasing the thin film stress, composite diaphragms consisting of multilayer (polySi/SixNy/polySi) materials have been fabricated, reducing the initial stress to a much lower level of about 70 MPa in tension. Three types of corrugation placements and several corrugation depths in a diaphragm area of 1 mm2 have been designed and fabricated. Microphones with flat frequency response between 100 Hz and 8~16 kHz and open-circuit sensitivities as high as 8.1~14.2 mV/Pa under the bias voltages of 10~25 V have been fabricated in a reproducible way. The experimental results proved that the corrugation technique is promising for silicon condenser microphone
Keywords :
diaphragms; elemental semiconductors; etching; frequency response; micromachining; micromechanical devices; microphones; silicon; 10 to 25 V; 100 Hz to 16 kHz; Si-SiN-Si; anisotropic etching; bias voltages; composite diaphragms; condenser microphone; corrugated diaphragm technique; corrugation depths; corrugation placements; flat frequency response; initial stress; mechanical sensitivities; open-circuit sensitivities; sacrificial layer etching techniques; Anisotropic magnetoresistance; Etching; Fabrication; Microphones; Nonhomogeneous media; Semiconductor thin films; Silicon; Stress; Testing; Wafer bonding;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.536626
Filename :
536626
Link To Document :
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