DocumentCode
1368790
Title
High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size
Author
Emanuel, M.A. ; Carlson, N.W. ; Skidmore, J.A.
Author_Institution
Lawrence Livermore Nat. Lab., CA, USA
Volume
8
Issue
10
fYear
1996
Firstpage
1291
Lastpage
1293
Abstract
Lasers diodes having a large transverse spot size have been fabricated from a modified graded index separate confinement heterostructure with an active region consisting of two 70 /spl Aring/ Al/sub 0.15/In/sub 0.10/Ga/sub 0.75/As strained quantum wells. The catastrophic optical damage threshold for these large transverse mode devices is increased by more than two times over that of conventional devices while still maintaining good device performance.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; quantum well lasers; 808 nm; Al/sub 0.15/In/sub 0.10/Ga/sub 0.75/As; AlGaAs laser diode; catastrophic optical damage threshold; efficiency; graded index separate confinement heterostructure; spot size; strained quantum well; transverse mode device; Diode lasers; Laboratories; Laser modes; Optical buffering; Optical devices; Optical pumping; Optical waveguides; Quantum well lasers; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.536631
Filename
536631
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