Reduced turn-on delay time in 1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers with a buried heterostructure

Author

Nakahara, K. ; Uomi, K. ; Haga, T. ; Taniwatari, T. ; Oishi, A.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

8

Issue

10

fYear

1996

Firstpage

1297

Lastpage

1298

Abstract

A reduction in both the threshold current and carrier lifetime is demonstrated, for the first time, in an n-type modulation-doped InGaAsP strained multiquantum well laser with a buried heterostructure. Threshold current and carrier lifetime is reduced by 10% and 15%, respectively, as compared with a undoped MQW laser, which results in a 35% decrease in the turn-on delay time. This confirms the suitability of this type of laser for use as a light source for high-density parallel optical interconnection.

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; quantum well lasers; 1.3 micron; InGaAsP-InP; buried heterostructure; carrier lifetime; high-density parallel optical interconnection; light source; n-type modulation-doped strained multiquantum-well laser; threshold current; turn-on delay time; Charge carrier lifetime; Delay effects; Epitaxial layers; Fiber lasers; Laser theory; Optical interconnections; Quantum well devices; Semiconductor lasers; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.536633

Filename

536633