Title :
High-power, wide-temperature range operation of 1.3-μm gain-coupled DFB lasers with automatically buried InAsP absorptive grating
Author :
Kito, M. ; Otsuka, N. ; Nakamura, S. ; Ishino, M. ; Matsui, Y.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
DFB lasers operating at 1.3 μm with gain-coupling structure show single-mode operation over a wide temperature range of -20/spl sim/85/spl deg/C and up to a high power of 130 mW. These lasers have InAsP absorptive grating, which can be formed by a substantially simplified fabrication process, involving annealing a corrugated InP substrate in an atmosphere of mixed arsine and phosphine.
Keywords :
distributed feedback lasers; semiconductor lasers; -20 to 85 C; 1.3 micron; 130 mW; DFB laser; InAsP; annealing; buried absorptive grating; corrugated substrate; fabrication; gain coupling; high power operation; single mode operation; temperature range; Annealing; Atmosphere; Gratings; Indium phosphide; Laser feedback; Laser modes; Power lasers; Quantum well devices; Substrates; Temperature distribution;
Journal_Title :
Photonics Technology Letters, IEEE
