Application of CMP process monitor to Cu polishing

Author

Kojima, Tadayuki ; Miyajima, Motosyu ; Akaboshi, Fumihiko ; Yogo, Toshiya ; Ishimoto, Satoshi ; Okuda, Atushi

Author_Institution

Fujitsu Labs. Ltd., Kawasaki, Japan

Volume

13

Issue

3

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

293

Lastpage

299

Abstract

We have developed a chemical mechanical polishing (CMP) process monitor which uses polishing vibration. The monitor enables us to accurately detect the polishing end point in copper (Cu) polishing even when the process conditions such as initial film thickness, slurry flow and polishing rate are changed and when polishing multilayer film. Furthermore, the monitor is not only applicable to Cu polishing but also to planarizing polishing of an inter-level dielectric layer. The monitor can be also used to control the processes and the equipment because of its capability to detect abnormalities in the polishing conditions

Keywords

chemical mechanical polishing; copper; dielectric thin films; integrated circuit metallisation; process monitoring; CMP; Cu; end point; initial film thickness; inter-level dielectric layer; multilayer film; planarizing polishing; polishing rate; polishing vibration; process monitor; slurry flow; Acceleration; Band pass filters; Condition monitoring; Copper; Dielectrics; Frequency; Infrared detectors; Laser beams; Slurries; Torque;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.857938

Filename

857938