• DocumentCode
    1368871
  • Title

    A new gas circulation RIE

  • Author

    Ohiwa, Tokuhisa ; Sakai, Itsuko ; Okumura, Katsuya

  • Author_Institution
    Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
  • Volume
    13
  • Issue
    3
  • fYear
    2000
  • fDate
    8/1/2000 12:00:00 AM
  • Firstpage
    310
  • Lastpage
    314
  • Abstract
    A new gas circulation RIE has been developed. It pumps the exhausted gas still containing usable process gas into the RIE process chamber to be reused. This new gas circulation RIE showed performances of etch rate, selectivity, etching profile, and uniformity in C4 F8/CO/Ar SiO2 etching process comparable to those for the conventional process with 50% less C4F8 and 80% less CO and Ar of the original input gas flow rates. It also decreased PFC emission by two thirds less in CO2 conversion. This new gas circulation RIE is effective for the suppression of the greenhouse effect and etching process cost
  • Keywords
    air pollution; integrated circuit manufacture; large scale integration; sputter etching; Ar; CO; PFC emission; SiO2; etch rate; etching profile; gas circulation RIE; greenhouse effect; input gas flow rates; per-fluoro compound; process chamber; process cost; selectivity; uniformity; Argon; Chemistry; Costs; Etching; Gases; Large scale integration; Plasma applications; Plasma density; Pressure control; Valves;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.857941
  • Filename
    857941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1368871