Title :
A new gas circulation RIE
Author :
Ohiwa, Tokuhisa ; Sakai, Itsuko ; Okumura, Katsuya
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
fDate :
8/1/2000 12:00:00 AM
Abstract :
A new gas circulation RIE has been developed. It pumps the exhausted gas still containing usable process gas into the RIE process chamber to be reused. This new gas circulation RIE showed performances of etch rate, selectivity, etching profile, and uniformity in C4 F8/CO/Ar SiO2 etching process comparable to those for the conventional process with 50% less C4F8 and 80% less CO and Ar of the original input gas flow rates. It also decreased PFC emission by two thirds less in CO2 conversion. This new gas circulation RIE is effective for the suppression of the greenhouse effect and etching process cost
Keywords :
air pollution; integrated circuit manufacture; large scale integration; sputter etching; Ar; CO; PFC emission; SiO2; etch rate; etching profile; gas circulation RIE; greenhouse effect; input gas flow rates; per-fluoro compound; process chamber; process cost; selectivity; uniformity; Argon; Chemistry; Costs; Etching; Gases; Large scale integration; Plasma applications; Plasma density; Pressure control; Valves;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
