Title :
A 920-1650-nm high-current photodetector
Author :
Davis, G.A. ; Weiss, R.E. ; LaRue, R.A. ; Williams, K.J. ; Esman, R.D.
Author_Institution :
Intevac Adv. Technol. Div., Santa Clara, CA, USA
Abstract :
We present novel (InGa)As photodetectors which exhibit 150 mA continuous photocurrent at 2 W power dissipation. A responsivity of 0.97 A/W at 1319 nm is achieved with greater than 60% external quantum efficiency from 920 to 1650 mm. Measured dark currents are below 1 nA and bandwidths of 295 MHz are achieved. These low dark-current devices have utility to applications requiring large output current and large dynamic range.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; integrated optics; photodetectors; semiconductor quantum wells; 1 nA; 1319 nm; 150 mA; 2 W; 295 MHz; 60 percent; 920 to 1650 nm; IR detectors; InGaAs; InGaAs photodetectors; dark currents; external quantum efficiency; large dynamic range; large output current; low dark-current devices; mA continuous photocurrent; nm high-current photodetector; power dissipation; Absorption; Capacitance; Dark current; Detectors; Indium phosphide; Lattices; Optical modulation; Photodetectors; Photonic band gap; Power dissipation;
Journal_Title :
Photonics Technology Letters, IEEE
