DocumentCode :
1369225
Title :
New Thermocouple-Based Microwave/Millimeter-Wave Power Sensor MMIC Techniques in GaAs
Author :
Scott, Jonathan B. ; Low, T.S. ; Cochran, Steve ; Keppeler, Ben ; Staroba, John ; Yeats, Bob
Author_Institution :
Agilent Technol., Santa Rosa, CA, USA
Volume :
59
Issue :
2
fYear :
2011
Firstpage :
338
Lastpage :
344
Abstract :
We describe a new RF and microwave power sensor monolithic microwave integrated circuit design. The circuit incorporates a number of advances over existing designs. These include a III-V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism for in-built detection of load ageing and damage to extend calibration intervals, and a novel symmetrical structure to linearize the high-power end of the scale.
Keywords :
III-V semiconductors; MMIC; calibration; epitaxial growth; gallium arsenide; integrated circuit design; thermocouples; GaAs; III-V epitaxial structure; calibration intervals; figure-of-merit; load ageing; millimeter-wave power sensor MMIC; monolithic microwave integrated circuit design; thermocouples; Microwave; millimeter wave; power sensor; thermocouple;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2010.2087346
Filename :
5620943
Link To Document :
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