Threshold Voltage Adjustment in Nanoscale DG FinFETs Via Limited Source/Drain Dopants in the Channel

Nanoscale double-gate (DG) FinFETs with undoped fin bodies are shown to have threshold voltages (Vt) that can be adjusted for independent I _ON and I _OFF control by allowing limited source/drain (S/D) dopants in the channel. S/D engineering of the lateral doping profile in the extension is proposed as a viable means for effecting such channel doping [as well as gate-S/D (G-S/D) underlap] and, thus, adjusting Vt for optimal I _ON/I _OFF in low-power and high-performance applications of nanoscale-FinFET CMOS. Physics-based device simulations, numerical simulations, and measured current-voltage characteristics are used to demonstrate and support the proposed Vt design approach.