A Two-Dimensional Analytical Solution for Short-Channel Effects in Nanowire MOSFETs

This brief presents an analytical solution of the electrostatic potential for nanowire MOSFETs in the subthreshold region by solving Poisson´s equation in two dimensions (2D) in both semiconductor and gate insulator regions under cylindrical coordinates. Combining the analytical solution with the current continuity equation, one can derive an expression for the subthreshold current, from which the important parameters for short-channel effects (SCEs), such as threshold voltage rolloff, drain-induced barrier lowering, and subthreshold slope degradation, are analytically extracted. The 2D analytical model for SCEs has been validated by the numerical simulation results.