Title :
NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool
Author :
Steiger, Sebastian ; Povolotskyi, Michael ; Park, Hong-Hyun ; Kubis, Tillmann ; Klimeck, Gerhard
Author_Institution :
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA
Abstract :
The development of a new nanoelectronics modeling tool, NEMO5, is reported. The tool computes strain, phonon spectra, electronic band structure, charge density, charge current, and other properties of nanoelectronic devices. The modular layout enables a mix and match of physical models with different length scales and varying numerical complexity. NEMO5 features multilevel parallelization and is based on open-source packages. Its versatility is demonstrated with selected application examples: a multimillion-atom strain calculation, bulk electron and phonon band structures, a 1-D Schrödinger-Poisson simulation, a multiphysics simulation of a resonant tunneling diode, and quantum transport through a nanowire transistor.
Keywords :
Poisson equation; Schrodinger equation; nanoelectronics; semiconductor device models; semiconductor device packaging; 1D Schrödinger-Poisson simulation; NEMO5; bulk electron; charge current; charge density; electronic band structure; multilevel parallelization; multimillion-atom strain calculation; multiphysics simulation; nanoelectronic devices; nanowire transistor; numerical complexity; open-source packages; parallel multiscale nanoelectronics modeling tool; phonon band structures; phonon spectra; physical models; quantum transport; resonant tunneling diode; Computational modeling; Mathematical model; Nanoelectronics; Numerical models; Quantum wires; Strain measurement; Modeling; NEMO; Poisson; Schrödinger; multiphysics; multiscale; nanoelectronics; nanostructures; nonequilibrium Greens function formalism (NEGF); phonons; quantum dot; quantum well; quantum wire; simulation; strain; transport;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2011.2166164