DocumentCode
136947
Title
The evaluation and application of wide bandgap power devices
Author
Lixing Fu ; Xuan Zhang ; Scott, M. ; Chengcheng Yao ; Jin Wang
Author_Institution
Ohio State Univ., Columbus, OH, USA
fYear
2014
fDate
Aug. 31 2014-Sept. 3 2014
Firstpage
1
Lastpage
5
Abstract
This paper presents an overview of wide bandgap (WBG) power devices. The development and challenges of silicon carbide (SiC) and gallium nitride (GaN) power devices are summerized. A comprehensive evaluation of the performance of different devices is conducted, including static characterization and dynamic switching related tests. The paper also demonstrates the application of WBG devices in power electronic circuits. The testing results are provided to show the performance of WBG devices in different aspects.
Keywords
III-V semiconductors; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; SiC; WBG power devices; dynamic switching; power electronic circuits; static characterization; wide bandgap power devices; Capacitors; Gallium nitride; Silicon; Silicon carbide; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location
Beijing
Print_ISBN
978-1-4799-4240-4
Type
conf
DOI
10.1109/ITEC-AP.2014.6941195
Filename
6941195
Link To Document