DocumentCode :
1369535
Title :
Self-Controlled Writing and Erasing in a Memristor Crossbar Memory
Author :
Ebong, Idongesit E. ; Mazumder, Pinaki
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume :
10
Issue :
6
fYear :
2011
Firstpage :
1454
Lastpage :
1463
Abstract :
The memristor device technology has created waves in the research community and led to the consideration of using the device in multiple avenues. The most likely candidate for early adoption is the nonvolatile memory due to the small cell size (increased scaling potential), increased density as compared to flash, and ability to stack these devices in a crossbar structure. This paper analyzes the feasibility of a memristor memory and introduces an adaptive read, write, and erase method that may be used to realize a more resilient memory system in the face of low yield in the nanotechnology regime. The proposed method is evaluated in simulation program with integrated circuit emphasis (SPICE) and a hand analysis model is extracted to help explain the sources of power and energy consumption. Finally, the power metrics are compared to flash memory technology, and the memristor memory is shown to have an energy per bit consumption about one-tenth that of flash when programming, comparable to flash when erasing, and about one-fourth of flash when reading.
Keywords :
SPICE; low-power electronics; memristors; nanoelectronics; random-access storage; RAM; SPICE; adaptive erase method; adaptive read method; adaptive write method; energy consumption; memristor crossbar memory; memristor device technology; nanotechnology; nonvolatile memory; power consumption; power metrics; resistive random access memory; self-controlled erasing; self-controlled writing; simulation program with integrated circuit emphasis; Adaptation models; Memristors; Random access memory; Resistance; Memristor; resistive random access memory (RAM);
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2011.2166805
Filename :
6069931
Link To Document :
بازگشت