DocumentCode :
1369975
Title :
Wide bandgap semiconductor materials and devices
Author :
Yoder, Max N.
Author_Institution :
Electron. Div., Office of Naval Res., Arlington, VA, USA
Volume :
43
Issue :
10
fYear :
1996
fDate :
10/1/1996 12:00:00 AM
Firstpage :
1633
Lastpage :
1636
Abstract :
Given a matrix of all semiconductor materials and their properties, the highest and the lowest of these property values will almost always be associated with wide bandgap materials. The many possible combinations of these “poles and zeros” lead not only to superlative electron device performance, but to new device concepts as well. An overview of wide bandgap semiconductor properties is presented followed by several concepts for both new and enhanced devices. Finally, impediments to immediate exploitation and a time-oriented appraisal of the various materials and devices is presented
Keywords :
semiconductor devices; semiconductor materials; wide band gap semiconductors; electron devices; wide bandgap semiconductor materials; Conducting materials; Dielectric materials; Electron devices; Electron mobility; Optical amplifiers; Optical materials; Photonic band gap; Semiconductor materials; Thermal conductivity; Wide band gap semiconductors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.536807
Filename :
536807
Link To Document :
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