DocumentCode :
1370076
Title :
Photo-Induced Instability of Nanocrystalline Silicon TFTs
Author :
Bauza, Marius ; Ahnood, Arman ; Li, Flora M. ; Vygranenko, Yuriy ; Esmaeili-Rad, Mohammad R. ; Chaji, G. ; Sazonov, Andrei ; Robertson, John ; Milne, William I. ; Nathan, Arokia
Author_Institution :
London Centre for Nanotechnol., Univ. Coll. London, London, UK
Volume :
6
Issue :
12
fYear :
2010
Firstpage :
589
Lastpage :
591
Abstract :
We examine the instability behavior of nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) in the presence of electrical and optical stress. The change in threshold voltage and sub-threshold slope is more significant under combined bias-and-light stress when compared to bias stress alone. The threshold voltage shift after 6 h of bias stress is about 7 times larger in the case with illumination than in the dark. Under bias stress alone, the primary instability mechanism is charge trapping at the semiconductor/insulator interface. In contrast, under combined bias-and-light stress, the prevailing mechanism appears to be the creation of defect states in the channel, and believed to take place in the amorphous phase, where the increase in the electron density induced by electrical bias enhances the non-radiative recombination of photo-excited electron-hole pairs. The results reported here are consistent with observations of photo-induced efficiency degradation in solar cells.
Keywords :
electron density; elemental semiconductors; nanoelectronics; nanostructured materials; photoexcitation; silicon; solar cells; thin film transistors; Si; amorphous phase; bias stress; bias-and-light stress; charge trapping; electrical bias; electron density; nanocrystalline silicon TFT; nanocrystalline silicon thin-film transistors; nonradiative recombination; photo-excited electron-hole pairs; photo-induced efficiency degradation; photo-induced instability; primary instability mechanism; semiconductor-insulator interface; solar cells; threshold voltage shift; Annealing; Charge carrier processes; Logic gates; Silicon; Stress; Thin film transistors; Threshold voltage; Nanocrystalline silicon (nc-Si:H); photo-induced instability; thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2010.2076363
Filename :
5621680
Link To Document :
بازگشت