Title :
Integrated condition monitoring for vehicle-ready power modules
Author :
Bing Ji ; Xueguan Song ; Haimeng Wu ; Pickert, Volker ; Wenping Cao
Author_Institution :
Sch. of EEE, Newcastle Univ., Newcastle upon Tyne, UK
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
The IGBT solder fatigue is a frequently reported failure mechanism attributed to package wear-out. It can aggravate other type of failures and degradations of the device and lead to ultimate failures. Thermal impedance can be used as a degradation indicator to detect this type of failure mode and issue early warnings for the aged IGBT.. In this research, different power dissipation conditions and ambient temperatures are discussed. Their impacts on the thermal impedance has been studied with FEA simulation and validated by the experimental results. This reveals the interplay between thermal impedance and these conditions. Furthermore, the health conditions of DCB substrate solders of the IGBT modules are altered by the aging test. The changes of junction temperature and thermal impedance are compared for solder layer in both health and fatigue conditions. This confirms the validity of the proposed condition monitoring method for vehicle-ready IGBT power modules.
Keywords :
ageing; condition monitoring; failure (mechanical); failure analysis; finite element analysis; insulated gate bipolar transistors; power semiconductor devices; soldering; solders; DCB substrate solders; FEA simulation; IGBT solder fatigue; aging test; failure mechanism; failure mode; fatigue conditions; health conditions; integrated condition monitoring; junction temperature; package wear-out; power dissipation conditions; thermal impedance; vehicle-ready power modules; Heating; Impedance; Insulated gate bipolar transistors; Junctions; Multichip modules; Temperature measurement; Temperature sensors; Failure analysis; IGBT; monitoring; reliability; temperature;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6941244