Title :
A low-power GaAs front-end IC with current-reuse configuration using 0.15-μm-gate MODFETs
Author :
Ishida, Hidetoshi ; Koizumi, Haruhiko ; Miyatsuji, Kazuo ; Takenaka, Hiroshi ; Tanaka, Tsuyoshi ; Ueda, Daisuke
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
8/1/2000 12:00:00 AM
Abstract :
We have developed a novel current-reuse configuration of a front-end integrated circuit (IC), where the current can be reused in the whole circuit blocks that are a low-noise amplifier, local amplifier, and mixer. The power dissipation of the front-end IC is reduced by the factor of three as compared to conventional front-end ICs. Excellent RF performance such as conversion gain of 30 dB and noise figure of 1.6 dB at 1.5 GHz is attained under the conditions of the supply voltage and current of 3.6 V and 3 mA, respectively
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC mixers; UHF integrated circuits; field effect MMIC; gallium arsenide; low-power electronics; mobile radio; 0.15 micron; 1.5 GHz; 1.6 dB; 3 mA; 3.6 V; 30 dB; GaAs; MODFETs; conversion gain; current-reuse configuration; front-end IC; local amplifier; low-noise amplifier; power dissipation; supply current; supply voltage; Circuits; Current supplies; Gallium arsenide; Low-noise amplifiers; Noise figure; Performance gain; Power dissipation; Radio frequency; Radiofrequency amplifiers; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
