Title :
A 60 GHz CMOS Power Amplifier With Built-in Pre-Distortion Linearizer
Author :
Tsai, Jeng-Han ; Wu, Chung-Han ; Yang, Hong-Yuan ; Huang, Tian-Wei
Author_Institution :
Dept. of Appl. Electron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
A built-in pre-distortion linearizer using cold-mode MOSFET with forward body bias is presented for 60 GHz CMOS PA linearization on 90 nm CMOS LP process. The power amplifier (PA) achieves a Psat of 10.72 dBm and OP1 dB of 7.3 dBm from 1.2 V supply. After linearization, the OP1 dB has been doubled from 7.3 to 10.2 dBm and the operating PAE at OP1 dB consequently improves from 5.4% to 10.8%. The optimum improvement of the IMD3 is 25 dB.
Keywords :
CMOS analogue integrated circuits; MOSFET; field effect MIMIC; millimetre wave field effect transistors; millimetre wave power amplifiers; CMOS LP process; CMOS PA linearization; CMOS power amplifier; built-in predistortion linearizer; cold-mode MOSFET; forward body bias; frequency 60 GHz; size 90 nm; voltage 1.2 V; CMOS integrated circuits; Power MOSFET; Power generation; Semiconductor device measurement; Wireless communication; 60 GHz; CMOS; linearization; linearizer; power amplifier (PA); pre-distortion;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2171929
