Title :
A 500-mW high-efficiency Si MOS MMIC amplifier for 900-MHz-band use
Author :
Matsuno, Noriaki ; Yano, Hitoshi ; Suzuki, Yasuyuki ; Watanabe, Toshiro ; Tsubaki, Shigeki ; Toda, Tetsu ; Honjo, Kazuhiko
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
8/1/2000 12:00:00 AM
Abstract :
A 500-mW monolithic-microwave integrated-circuit (MMIC) amplifier using a 0.6-μm Si MOSFET for 900-MHz-band use has been developed. The input matching network, which consists of a spiral inductor and an MOS capacitor, was integrated onto the chip using a low-cost mass-production large-scale-integration process. A new spiral-inductor model, taking into account the dielectric loss and skin effect of the Si substrate, was introduced. We analyzed the stability and gain dependence on the gate structure of the MOSFET and optimized the gate finger length and the loss of the matching network to achieve high gain and stability. The fabricated MMIC amplifier achieved a linear gain of 15.2 dB and an output power of 27.1 dBm with a PAE of 60% under a supply voltage of 4.8 V
Keywords :
MMIC power amplifiers; UHF amplifiers; UHF integrated circuits; cellular radio; circuit stability; dielectric losses; elemental semiconductors; field effect MMIC; impedance matching; inductors; large scale integration; silicon; skin effect; 0.6 micron; 15.2 dB; 4.8 V; 500 mW; 60 percent; 900 MHz; MOS MMIC amplifier; MOSFET; Si; dielectric loss; gain dependence; gate finger length; gate structure; input matching network; linear gain; low-cost mass-production large-scale-integration process; matching network; output power; skin effect; spiral inductor; stability; supply voltage; Dielectric losses; Dielectric substrates; Impedance matching; Inductors; MMICs; MOS capacitors; MOSFET circuits; Power amplifiers; Spirals; Stability analysis;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
