DocumentCode :
1370473
Title :
GaAs switched capacitor DC-to-DC converter
Author :
Al-Kuran, Shihab ; Scheinberg, Norman ; Van Saders, John
Author_Institution :
Anadigics Inc., Warren, NJ, USA
Volume :
35
Issue :
8
fYear :
2000
Firstpage :
1121
Lastpage :
1127
Abstract :
A switched capacitor DC-to-DC negative converter fabricated in GaAs MESFET technology is introduced in this paper. The converter has an oscillator that runs at 250 kHz, and requires two external capacitors, 0.1 and 1 /spl mu/F. The converter runs off a wide range of supply voltage, 2 to 10 V, and has a typical output impedance of 75 /spl Omega/. A typical open circuit voltage conversion efficiency of 99.6% is achieved. The circuit can be integrated with other GaAs circuits to provide an on-chip negative supply. Measured, simulated and analytical results are introduced in this paper.
Keywords :
DC-DC power convertors; III-V semiconductors; MESFET circuits; gallium arsenide; switched capacitor networks; 2 to 10 V; 250 kHz; 99.6 percent; GaAs; GaAs MESFET technology; open circuit voltage conversion efficiency; switched capacitor DC-to-DC negative converter; Analytical models; Capacitors; DC-DC power converters; Gallium arsenide; Impedance; Integrated circuit measurements; MESFETs; Oscillators; Switching converters; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.859500
Filename :
859500
Link To Document :
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