MMIC active filter with tuned transversal element

Author

Tam, Kam Weng ; Vitor, Pedro ; Martins, Rui P.

Author_Institution

IST-Portugal, 1096 Lisbon, Portugal

Volume

45

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

632

Lastpage

634

Abstract

A novel GaAs monolithic microwave integrated circuit (MMIC) active filter structure based on the lumped and transversal technique is proposed for operation in the X-band. This new structure includes a tuned amplifier as transversal element of the filter in order to improve the band-edge rejection. A design example of a bandpass filter centered at 7.5 GHz with 2 dB passband ripple and 30 dB rejection at 1 GHz apart from passband edges is presented in terms of computer simulations and layout. The simulated results demonstrate its superior performance when compared with the traditional lumped and transversal technique

Keywords

III-V semiconductors; MESFET integrated circuits; active filters; band-pass filters; circuit tuning; field effect MMIC; gallium arsenide; microwave filters; 7.5 GHz; GaAs; GaAs MMIC; MMIC active filter; SHF; X-band; band-edge rejection; bandpass filter; lumped/transversal technique; monolithic microwave integrated circuit; tuned amplifier; tuned transversal element; Active filters; Band pass filters; Gallium arsenide; MMICs; Microwave filters; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits; Passband; Transversal filters;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.673646

Filename

673646