Title :
A new charge pump without degradation in threshold voltage due to body effect [memory applications]
Author :
Shin, Jongshin ; Chung, In-Young ; Park, Young June ; Min, Hong Shick
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new charge-pump circuit with the controllable body voltage is proposed. By adjusting the body voltage, the back bias effect is removed and the threshold voltage of the MOSFET used as a switch is kept constant. With no threshold voltage increase, higher output voltage than the conventional charge pump can be obtained in the proposed charge pump. With two auxiliary MOSFETs used to update the body voltage, the proposed charge pump shows compatible performance of the ideal diode charge pump.
Keywords :
EPROM; MOS memory circuits; capacitance; circuit stability; flash memories; back bias effect; body effect; charge pump; controllable body voltage; output voltage; threshold voltage; Capacitance; Charge coupled devices; Charge pumps; Degradation; Diodes; Low voltage; MOSFET circuits; Switches; Threshold voltage; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of
