• DocumentCode
    1370614
  • Title

    Postdeposition Anneal on Structural and Sensing Characteristics of High- \\kappa   \\hbox {Er}_{2} \</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Pan, Tung-Ming ; Lin, Chao-Wen ; Hsu, Ben-Ker</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>33</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2012</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>116</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>118</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>In this letter, we develop an electrolyte-insulator-semiconductor (EIS) device using a high- κ Er<sub>2</sub> TiO<sub>5</sub> sensing membrane deposited on a Si substrate through cosputtering. We used X-ray diffraction and X-ray photoelectron spectroscopy to study the structural properties of these films annealed at various temperatures. The EIS device incorporating an Er<sub>2</sub> TiO<sub>5</sub> sensing film annealed at 900<sup>°</sup>C exhibited a higher sensitivity of 58.4 mV/pH, a lower hysteresis voltage of 4.6 mV, and a smaller drift rate of 1.2 mV/h than other annealing temperatures, presumably suggesting the formation of a well-crystallized Er<sub>2</sub>TiO<sub>5</sub> film and a thinner silicate layer at the oxide/Si interface.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>X-ray diffraction; X-ray spectroscopy; chemical sensors; erbium compounds; pH measurement; photoelectron spectroscopy; Er<sub>2</sub>TiO<sub>5</sub>; X-ray diffraction; X-ray photoelectron spectroscopy; cosputtering; electrolyte-insulator-semiconductor pH sensors; postdeposition anneal; temperature 900 degC; voltage 4.6 mV; Annealing; Biomembranes; Erbium; Hysteresis; Silicon; Temperature sensors; <formula formulatype=$hbox{Er}_{2}hbox{TiO}_{5}$; Drift rate; electrolyte–insulator–semiconductor (EIS); hysteresis; sensitivity;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2171313
  • Filename
    6071026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1370614