مرکز منطقه ای اطلاع رساني علوم و فناوري - Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm <formula formulatype="inline"> <img src="/images/tex/556.gif" alt="g_{m}"> </formula>, and 0.66-<formula formulatype="inline"> <img src="/images/tex/20051.gif" alt="\\Omega \\cdot \\hb

Title :

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\\Omega \\cdot \\hb</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Singisetti, Uttam ; Wong, Man Hoi ; Speck, James S. ; Mishra, Umesh K.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>33</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>26</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>28</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>We report enhanced dc and small-signal RF performance of enhancement-mode (E-mode) metal-oxide-semiconductor heterojunction field-effect transistors (MOS-HFETs) in N-polar GaN technology with an ultrathin 5-nm GaN channel and graded AlGaN back-barrier structure with a record on-resistance (<i>R</i><sub>on</sub>) of 0.66 Ω·mm. The device has a maximum drain current (<i>Id</i>) of 1.15 A/mm, a peak transconductance (<i>gm</i>) of 510 mS/mm, and a peak current-gain cutoff frequency (<i>ft</i>) of 122 GHz, with a positive threshold voltage (<i>V</i><sub>th</sub>) of 1.6 V. The device shows improved saturation and pinchoff characteristics compared to the previously reported N-polar E-mode HFETs with a maximum <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of 2.2 × 10<sup>5</sup>.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; DC enhancement; enhancement-mode N-polar MOS-HFET; frequency 122 GHz; metal-oxide-semiconductor heterojunction field-effect transistor; peak transconductance; pinchoff characteristics; size 5 nm; small-signal RF performance; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Resistance; ALD <formula formulatype=$ $hbox{Al}_{2}hbox{O}_{3}$; AlGaN/GaN HEMT; GaN MOS-HFET; GaN high-k dielectric; N-polar GaN HEMT; enhancement mode; lowest $hbox{R}_{on}$; self-aligned;