• DocumentCode
    1370621
  • Title

    Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm g_{m} , and 0.66- \\Omega \\cdot \\hb</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Singisetti, Uttam ; Wong, Man Hoi ; Speck, James S. ; Mishra, Umesh K.</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>33</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2012</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>26</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>28</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>We report enhanced dc and small-signal RF performance of enhancement-mode (E-mode) metal-oxide-semiconductor heterojunction field-effect transistors (MOS-HFETs) in N-polar GaN technology with an ultrathin 5-nm GaN channel and graded AlGaN back-barrier structure with a record on-resistance (<i>R</i><sub>on</sub>) of 0.66 Ω·mm. The device has a maximum drain current (<i>Id</i>) of 1.15 A/mm, a peak transconductance (<i>gm</i>) of 510 mS/mm, and a peak current-gain cutoff frequency (<i>ft</i>) of 122 GHz, with a positive threshold voltage (<i>V</i><sub>th</sub>) of 1.6 V. The device shows improved saturation and pinchoff characteristics compared to the previously reported N-polar E-mode HFETs with a maximum <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of 2.2 × 10<sup>5</sup>.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; DC enhancement; enhancement-mode N-polar MOS-HFET; frequency 122 GHz; metal-oxide-semiconductor heterojunction field-effect transistor; peak transconductance; pinchoff characteristics; size 5 nm; small-signal RF performance; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Resistance; ALD <formula formulatype=$hbox{Al}_{2}hbox{O}_{3}$; AlGaN/GaN HEMT; GaN MOS-HFET; GaN high-k dielectric; N-polar GaN HEMT; enhancement mode; lowest $hbox{R}_{on}$; self-aligned;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2170656
  • Filename
    6071027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1370621