Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

Author

Yu, Ming-Jiue ; Yeh, Yung-Hui ; Cheng, Chun-Cheng ; Lin, Chang-Yu ; Ho, Geng-Tai ; Lai, Benjamin Chih-Ming ; Leu, Chyi-Ming ; Hou, Tuo-Hung ; Chan, Yi-Jen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

1

fYear

2012

Firstpage

47

Lastpage

49

Abstract

High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm²/V·s, the threshold voltage is -1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10⁵. The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.

Keywords

amorphous semiconductors; field effect transistors; gallium compounds; indium compounds; sputter deposition; thin film transistors; zinc compounds; InGaZnO; amorphous thin-film transistor; colorless polyimide substrate; maximum field-effect mobility; roll-to-roll fabrication; roll-to-roll-compatible sputtering process; temperature 293 K to 298 K; thin film deposition; top-gate self-aligned structure; voltage -1.35 V; Annealing; Fabrication; Glass; Logic gates; Substrates; Thin film transistors; Amorphous InGaZnO; roll-to-roll; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2170809

Filename

6071028