Title :
Terahertz dielectric response of ferroelectric BaxSr1??xTiO3 thin films
Author :
Kang, Seung Beom ; Kwak, Min Hwan ; Choi, Muhan ; Kim, Sungil ; Kim, Taeyong ; Cha, Eun Jong ; Kang, Kwang Yong
Author_Institution :
IT Convergence & Components Lab., Electron. & Telecomunications Res. Inst., Daejeon, South Korea
fDate :
11/1/2011 12:00:00 AM
Abstract :
Terahertz time-domain spectroscopy has been used to investigate the dielectric and optical properties of ferroelectric BaxSr1-xTiO3 thin films for nominal x-values of 0.4, 0.6, and 0.8 in the frequency range of 0.3 to 2.5 THz. The ferroelectric thin films were deposited at approximately 700 nm thickness on [001] MgO substrate by pulsed laser deposition. The measured complex dielectric and optical constants were compared with the Cole-Cole relaxation model. The results show that the Cole-Cole relaxation model fits well with the data throughout the frequency range and the dielectric relaxation behavior of ferroelectric BaxSr1-xTiO3 thin films varies with the films compositions. Among the compositions of BaxSr1-xTiO3 films with different Ba/Sr ratios, Ba0.6Sr0.4TiO3 has the highest dielectric constants and the shortest dielectric relaxation time.
Keywords :
dielectric relaxation; ferroelectric thin films; optical constants; permittivity; pulsed laser deposition; terahertz wave spectra; time-domain analysis; BaxSr1-xTiO3; Cole-Cole relaxation model; MgO; [001] MgO substrate; dielectric constant; dielectric properties; dielectric relaxation behavior; dielectric relaxation time; ferroelectric thin films; film compositions; frequency 0.3 THz to 2.5 THz; optical constant; optical properties; pulsed laser deposition; terahertz dielectric response; terahertz time-domain spectroscopy; Absorption; Dielectric constant; Dielectric measurements; Optical films; Substrates; Barium; Electric Conductivity; Materials Testing; Membranes, Artificial; Radiation Dosage; Strontium; Terahertz Radiation; Titanium;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2011.2084