Title :
Total charge capacitor model for short-channel MESFETs
Author :
Webster, Danny ; Darvishzadeh, Mahmoud ; Haigh, David
Author_Institution :
Dept. of Electr. Eng., Univ. Coll. London, UK
fDate :
10/1/1996 12:00:00 AM
Abstract :
Total charge models for short-channel metal-semiconductor field-effect transistors (MESFETs) currently available in large-signal simulator packages such as SPICE give a poor description of the bias dependence of the gate capacitance. The authors describe a novel empirical model whose structure is deduced from the reconstructed total charge function derived from measured S-parameters. The new model gives a good overall fit to the observed gate capacitance behavior of a commercial monolithic microwave/millimeter-wave integrated circuit (MMIC) MESFET over a wide range of bias conditions and enables large-signal MESFET models to have a superior fit to measured S-parameters, giving greater confidence in design
Keywords :
S-parameters; Schottky gate field effect transistors; capacitance; electric charge; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; S-parameters; bias dependence; empirical model; gate capacitance; large-signal MESFET models; microwave MESFET; millimeter-wave MESFET; reconstructed total charge function; short-channel MESFET; total charge capacitor model; Capacitance; Capacitors; Current measurement; FETs; Integrated circuit measurements; Integrated circuit modeling; MESFETs; Packaging; SPICE; Scattering parameters;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
