DocumentCode
1370865
Title
New distributed amplifier design using transmission-gate FET´s
Author
Imai, Y. ; Kimura, S. ; Umeda, Y. ; Enoki, T.
Author_Institution
NTT LSI Labs., Kanagawa, Japan
Volume
6
Issue
10
fYear
1996
Firstpage
357
Lastpage
359
Abstract
We propose a new distributed amplifier design using a transmission-gate FET (TGFET) whose gate is embedded in the gate-artificial line. The new technique greatly simplifies the gate-artificial-line design, with no meandering or T-junction lines. The test TGFET distributed amplifier, using 0.1-μm-gate-length InP HEMT´s showed a promising bandwidth performance of 100 GHz.
Keywords
HEMT integrated circuits; distributed amplifiers; field effect MIMIC; millimetre wave amplifiers; wideband amplifiers; 0.1 micron; 100 GHz; EHF; InP; InP HEMT; MM-wave IC; bandwidth performance; distributed amplifier design; gate-artificial line; transmission-gate FET; Bandwidth; Coplanar waveguides; Distributed amplifiers; Electrodes; FETs; Frequency; Indium phosphide; Scattering parameters; Testing; Transmission lines;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.536944
Filename
536944
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