Title :
Process Dependence of Proton-Induced Degradation in GaN HEMTs
Author :
Roy, Tania ; Zhang, En Xia ; Puzyrev, Yevgeniy S. ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Choi, Bo K. ; Hmelo, Anthony B. ; Pantelides, Sokrates T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. The NH3-rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/ f noise of the devices increases with increasing fluence. Density functional theory calculations show that N vacancies and Ga-N divacancies lead to enhanced noise in these devices.
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; density functional theory; gallium compounds; high electron mobility transistors; proton effects; vacancies (crystal); wide band gap semiconductors; 1/f noise; AlGaN-GaN; Ga-N divacancies; NH3-rich conditions; density functional theory; electron volt energy 1.8 MeV; high electron mobility transistors; proton radiation responses; proton-induced degradation; Degradation; Gallium nitride; HEMTs; Logic gates; MODFETs; Protons; Radiation effects; $1/ f$ noise; AlGaN/GaN; HEMT; degradation; proton;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2073720
