A high-efficiency 94-GHz 0.15-μm InGaAs/InAlAs/InP monolithic power HEMT amplifier

Author

Lai, R. ; Ng, G.I. ; Lo, D.C.W. ; Block, T. ; Wang, H. ; Biedenbender, M. ; Streit, D.C. ; Liu, P.H. ; Dia, R.M. ; Lin, E.W. ; Yen, H.C.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

Volume

6

Issue

10

fYear

1996

Firstpage

366

Lastpage

368

Abstract

We report high efficiency W-band power monolithic microwave integrated circuits (MMIC´s) using passivated 0.15 μm gate length In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP HEMTs. A 0.15 μm×320 μm single stage InP power HEMT MMIC amplifier demonstrates a maximum power added efficiency of 23% with 40 mW output power and 4.9 dB power gain at 94 GHz. When biased for higher output power, 54 mW output power with 20% power added efficiency was achieved at 94 GHz. These results represent the best combination of efficiency and output power fixtured data reported to date at this frequency.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; millimetre wave power amplifiers; power amplifiers; 0.15 micron; 20 to 23 percent; 4.9 dB; 40 to 54 mW; 94 GHz; EHF; In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As-InP; MIMIC; MM-wave IC; W-band; high-efficiency amplifier; monolithic power HEMT amplifier; passivated HEMT; power HEMT MMIC amplifier; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.536947

Filename

536947