Title :
Laser formed metallic connections
Author :
Bernstein, Joseph B. ; Zhang, Wei ; Nicholas, Carl H.
Author_Institution :
Dept. of Nucl. Eng., Maryland Univ., College Park, MD, USA
fDate :
5/1/1998 12:00:00 AM
Abstract :
Solid metallic connections have been successfully formed between two standard levels of metallization using a focused infrared (IR) laser. This new process of laser formed connections has been used to link continuous chains and with resistances of less than 0.8 Ω per connection. A commercial laser repair system used extensively by the memory industry was employed to perform approximately 50000 individual links without failure. The electromigration resistance is comparable to standard metal interconnect. This technology has the potential to replace laser fuse cutting techniques to implement repair schemes and it can be used to program wiring in multichip module-deposited (MCM-D) or wafer scale integration applications implemented on silicon substrates. Furthermore, because it is an additive process, it lends itself to redundancy for higher yield and reliability
Keywords :
electromigration; integrated circuit interconnections; integrated circuit reliability; integrated circuit yield; laser materials processing; multichip modules; redundancy; wafer-scale integration; wiring; additive process; continuous chains; electromigration resistance; focused infrared laser; laser formed metallic connections; laser repair system; metallization levels; multichip module-deposited applications; redundancy; reliability; wafer scale integration; wiring; yield; Dielectric materials; Integrated circuit interconnections; Integrated circuit reliability; Laser beam cutting; Metallization; Optical materials; Optical pulses; Redundancy; Silicon; Wafer scale integration;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on
