Design & analysis of a novel IGBT package with double-sided cooling

Author

Yulin Zhong ; Jinlei Meng ; Puqi Ning ; Xuhui Wen

Author_Institution

Key Lab. of Power Electron. & Electr. Drives, Beijing, China

fYear

2014

fDate

Aug. 31 2014-Sept. 3 2014

Firstpage

1

Lastpage

6

Abstract

Conventional IGBT modules with bonding wires have been suffered from relatively high thermal resistance from junction to case (Rthjc) due to unavoidable single-sided cooling (SSC), and also suffered from uneven current distribution due to unsymmetrical electrical interconnection. A novel IGBT package with double-sided cooling (DSC) geometry was proposed in this paper to overcome these problems. A comprehensive comparative study between the DSC geometry and the SSC geometry has been conducted by simulations. The analytical results demonstrate that the DSC geometry is well superior to the conventional SSC geometry in both electrical and thermal behavior, which predicts a brighter future in various key applications for this emerging package.

Keywords

cooling; current distribution; insulated gate bipolar transistors; lead bonding; semiconductor device packaging; thermal resistance; DSC geometry; IGBT modules; IGBT package analysis; IGBT package design; SSC; bonding wires; current distribution; double-sided cooling; electrical behavior; thermal behavior; thermal resistance; unsymmetrical electrical interconnection; Geometry; Heating; Insulated gate bipolar transistors; Logic gates; Multichip modules; Thermal resistance; Wires; Double-Sided Cooling; IGBT Package Design; Parasitics Extraction; Thermal Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo

Conference_Location

Beijing

Print_ISBN

978-1-4799-4240-4

Type

conf

DOI

10.1109/ITEC-AP.2014.6941287

Filename

6941287