Solution-Processed ZTO TFTs With Recessed Gate and Low Operating Voltage

Author

Lee, Chen-Guan ; Dutta, Soumya ; Dodabalapur, Ananth

Author_Institution

Res. Center, Univ. of Texas at Austin, Austin, TX, USA

Volume

31

Issue

12

fYear

2010

Firstpage

1410

Lastpage

1412

Abstract

We demonstrate solution-processed zinc tin oxide thin-film transistors (TFTs) with a patterned-gate configuration. High-k and solution-processed zirconium oxide (ZrO₂) was employed to lower down the operating voltage. Devices with recessed and nonrecessed gate electrodes were compared to study the influence of gate surface relief on the performance of the solution-processed thin films. The TFTs with the recessed gate electrode operate at 5 V and have a threshold voltage of ~ 1 V, subthreshold slope of ~ 0.23 V/dec, saturation mobility of 2.5 cm²/V ·s, and on/off current ratio of > 10⁶.

Keywords

MOSFET; high-k dielectric thin films; low-power electronics; thin film transistors; zirconium compounds; ZrO₂; gate surface relief; low operating voltage; patterned-gate configuration; recessed gate; solution-processed ZTO TFT; thin-film transistors; voltage 5 V; Dielectrics; Electrodes; Leakage current; Logic gates; Surface morphology; Thin film transistors; Low operating voltage; metal-oxide semiconductor; solution process; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2081659

Filename

5623297