Title :
Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs
Author :
Rengel, Raúl ; Martín, María J. ; Danneville, François
Author_Institution :
Appl. Phys. Dept., Univ. of Salamanca, Salamanca, Spain
Abstract :
A study of the high-frequency noise performance of laterally asymmetric channel (LAC) MOSFETs and conventional devices is presented. Particular attention is paid to the investigation of the influence of the intrinsic noise sources on the noise performance of the transistors. The improvement in the minimum noise figure of the LAC transistor as compared to a conventional MOSFET is analyzed in terms of reduced induced gate noise, higher cross correlation of drain and gate current fluctuations, and the enhancement of the device transconductance.
Keywords :
MOSFET; integrated circuit noise; RF noise; device transconductance; gate current fluctuation; intrinsic noise sources; laterally asymmetric channel MOSFET; microscopic modeling; reduced induced gate noise; Correlation; Logic gates; MOSFETs; Noise; Performance evaluation; Radio frequency; Intrinsic noise sources; Monte Carlo modeling; RF performance; laterally asymmetric channel (LAC) MOSFET; minimum noise figure $(NF_{min})$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2082488
