DocumentCode
1371362
Title
Field related passivation of interface trap after high-field electron injection [MOSFETs]
Author
Wu, Yongjun ; Tan, Changhua ; Xu, Mingzhen ; Wang, Yangyuan
Author_Institution
Inst. of Microelectron., Peking univ., Beijing, China
Volume
34
Issue
7
fYear
1998
fDate
4/2/1998 12:00:00 AM
Firstpage
656
Lastpage
657
Abstract
A new experimental result for field related passivation of interface traps after high-field electron injection is presented, showing that passivation can be enhanced by positive low-field bias. Decay of the positive oxide charge is also obtained simultaneously indicating that there is no conversion of trapped holes into interface traps
Keywords
MOSFET; electron traps; interface states; passivation; MOSFETs; field related passivation; high-field electron injection; interface trap; positive low-field bias; positive oxide charge;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980508
Filename
673781
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