Title :
Field related passivation of interface trap after high-field electron injection [MOSFETs]
Author :
Wu, Yongjun ; Tan, Changhua ; Xu, Mingzhen ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking univ., Beijing, China
fDate :
4/2/1998 12:00:00 AM
Abstract :
A new experimental result for field related passivation of interface traps after high-field electron injection is presented, showing that passivation can be enhanced by positive low-field bias. Decay of the positive oxide charge is also obtained simultaneously indicating that there is no conversion of trapped holes into interface traps
Keywords :
MOSFET; electron traps; interface states; passivation; MOSFETs; field related passivation; high-field electron injection; interface trap; positive low-field bias; positive oxide charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980508
